Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
6
Channel Type:
N
Maximum Continuous Collector Current:
35 A
Maximum Gate Emitter Voltage:
±20.0V
Package Type:
DIP26
Configuration:
3 Phase
Input Capacitance (Cies) @ Vce:
11.897nF @ 20V
Base Part Number:
NXH50
Detailed Description:
IGBT Module Three Phase Inverter with Brake 1200V 50A 20mW Through Hole 26-DIP
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 50A
Supplier Device Package:
26-DIP
Manufacturer Standard Lead Time:
24 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
20mW
Customer Reference:
Package / Case:
26-PowerDIP Module (1.199", 47.20mm)
Input:
Three Phase Bridge Rectifier
Configuration:
Three Phase Inverter with Brake
NTC Thermistor:
Yes
Current - Collector Cutoff (Max):
250µA
Manufacturer:
ON Semiconductor
