ON Semiconductor FAM65HR51DS2

ON Semiconductor

Product Information

Input Capacitance (Cies) @ Vce:
4.86nF @ 400V
Base Part Number:
FAM65
Detailed Description:
IGBT Module Half Bridge Inverter 650V 33A 135W Through Hole
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
33A
Voltage - Collector Emitter Breakdown (Max):
650V
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
135W
Customer Reference:
Input:
Standard
Configuration:
Half Bridge Inverter
NTC Thermistor:
No
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FAM65HR51DS2. It holds 4.86nf @ 400v of input capacitance. Base Part Number: fam65. It features igbt module half bridge inverter 650v 33a 135w through hole. The product is available in through hole configuration. The maximum collector current includes 33a. The maximum collector emitter breakdown voltage of the product is 650v. It has typical 52 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 135w. Its input values include standard. The product is available in half bridge inverter configuration. NTC Thermistor - no. The on semiconductor's product offers user-desired applications.

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FAM65HR51DS1,S2,S3(Datasheets)

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