Vishay Semiconductor Diodes Division VS-GT80DA120U

VS-GT80DA120U Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division

Product Information

Manufacturer Standard Lead Time:
28 Weeks
Current - Collector (Ic) (Max):
139A
Detailed Description:
IGBT Module Trench Single 1200V 139A 658W Chassis Mount SOT-227
Vce(on) (Max) @ Vge, Ic:
2.55V @ 15V, 80A
Operating Temperature:
-40°C ~ 150°C (TJ)
Input Capacitance (Cies) @ Vce:
4.4nF @ 25V
Package / Case:
SOT-227-4, miniBLOC
Input:
Standard
NTC Thermistor:
No
Base Part Number:
GT80
Voltage - Collector Emitter Breakdown (Max):
1200V
Configuration:
Single
Manufacturer:
Vishay Semiconductor Diodes Division
IGBT Type:
Trench
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Chassis Mount
Series:
HEXFRED®
Supplier Device Package:
SOT-227
Packaging:
Bulk
Power - Max:
658W
Customer Reference:
Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GT80DA120U. It has typical 28 weeks of manufacturer standard lead time. The maximum collector current includes 139a. It features igbt module trench single 1200v 139a 658w chassis mount sot-227. Features 2.55v @ 15v, 80a. The product has -40°c ~ 150°c (tj) operating temperature range. It holds 4.4nf @ 25v of input capacitance. Moreover, the product comes in sot-227-4, minibloc. Its input values include standard. NTC Thermistor - no. Base Part Number: gt80. The maximum collector emitter breakdown voltage of the product is 1200v. The product is available in single configuration. The vishay semiconductor diodes division's product offers user-desired applications. Features an IGBT trench type. In addition, 100µa is the maximum current at collector cutoff. The product is available in chassis mount configuration. The product hexfred®, is a highly preferred choice for users. sot-227 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 658w.

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VS-GT80DA120U(Datasheets)

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