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This is manufactured by Microsemi Corporation. The manufacturer part number is APTGT50DH120T3G. It holds 3.6nf @ 25v of input capacitance. The maximum collector current includes 75a. It features igbt module trench field stop asymmetrical bridge 1200v 75a 277w chassis mount sp3. The product is available in asymmetrical bridge configuration. The product is available in chassis mount configuration. In addition, 250µa is the maximum current at collector cutoff. Features 2.1v @ 15v, 50a. sp3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 277w. Moreover, the product comes in sp3. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - yes. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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