Microsemi Corporation APTGF150DH120G
Product Information
Input Capacitance (Cies) @ Vce:
10.2nF @ 25V
Current - Collector (Ic) (Max):
200A
Detailed Description:
IGBT Module NPT Asymmetrical Bridge 1200V 200A 961W Chassis Mount SP6
Configuration:
Asymmetrical Bridge
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
350µA
Vce(on) (Max) @ Vge, Ic:
3.7V @ 15V, 150A
Supplier Device Package:
SP6
Voltage - Collector Emitter Breakdown (Max):
1200V
Power - Max:
961W
Package / Case:
SP6
Input:
Standard
IGBT Type:
NPT
NTC Thermistor:
No
Manufacturer:
Microsemi Corporation
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Yes. Our products in Transistors - IGBTs - Modules category are shipped in lowest possible time.
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Yes. We ship APTGF150DH120G Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTGF150DH120G. It holds 10.2nf @ 25v of input capacitance. The maximum collector current includes 200a. It features igbt module npt asymmetrical bridge 1200v 200a 961w chassis mount sp6. The product is available in asymmetrical bridge configuration. The product is available in chassis mount configuration. In addition, 350µa is the maximum current at collector cutoff. Features 3.7v @ 15v, 150a. sp6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. The maximum power of the product is 961w. Moreover, the product comes in sp6. Its input values include standard. Features an IGBT npt type. NTC Thermistor - no. The microsemi corporation's product offers user-desired applications.
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