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Microsemi Corporation APT50GT120JRDQ2

APT50GT120JRDQ2 Microsemi Corporation
Microsemi Corporation

Product Information

Input Capacitance (Cies) @ Vce:
2.5nF @ 25V
Current - Collector (Ic) (Max):
72A
Detailed Description:
IGBT Module NPT Single 1200V 72A 379W Chassis Mount ISOTOP®
Configuration:
Single
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
400µA
Series:
Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic:
3.7V @ 15V, 50A
Supplier Device Package:
ISOTOP®
Voltage - Collector Emitter Breakdown (Max):
1200V
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
379W
Package / Case:
ISOTOP
Input:
Standard
IGBT Type:
NPT
NTC Thermistor:
No
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT50GT120JRDQ2. It holds 2.5nf @ 25v of input capacitance. The maximum collector current includes 72a. It features igbt module npt single 1200v 72a 379w chassis mount isotop®. The product is available in single configuration. The product is available in chassis mount configuration. In addition, 400µa is the maximum current at collector cutoff. The product thunderbolt igbt®, is a highly preferred choice for users. Features 3.7v @ 15v, 50a. isotop® is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 379w. Moreover, the product comes in isotop. Its input values include standard. Features an IGBT npt type. NTC Thermistor - no. The microsemi corporation's product offers user-desired applications.

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APT50GT120JRDQ2(Datasheets)

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