Global Power Technologies Group GSID600A120S4B1

Global Power Technologies Group

Product Information

Input Capacitance (Cies) @ Vce:
51nF @ 25V
Current - Collector (Ic) (Max):
1130A
Detailed Description:
IGBT Module Half Bridge 1200V 1130A 3060W Chassis Mount Module
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
1mA
Series:
Amp+™
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 600A
Supplier Device Package:
Module
Manufacturer Standard Lead Time:
8 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Operating Temperature:
-40°C ~ 150°C
Power - Max:
3060W
Package / Case:
Module
Input:
Standard
Configuration:
Half Bridge
NTC Thermistor:
Yes
Manufacturer:
Global Power Technologies Group
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This is manufactured by Global Power Technologies Group. The manufacturer part number is GSID600A120S4B1. It holds 51nf @ 25v of input capacitance. The maximum collector current includes 1130a. It features igbt module half bridge 1200v 1130a 3060w chassis mount module. The product is available in chassis mount configuration. In addition, 1ma is the maximum current at collector cutoff. The product amp+™, is a highly preferred choice for users. Features 2.1v @ 15v, 600a. module is the supplier device package value. It has typical 8 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. The product has -40°c ~ 150°c operating temperature range. The maximum power of the product is 3060w. Moreover, the product comes in module. Its input values include standard. The product is available in half bridge configuration. NTC Thermistor - yes. The global power technologies group's product offers user-desired applications.

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GSID600A120S4B1 Preliminary(Datasheets)

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FAQs

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You can order Global Power Technologies Group brand products with GSID600A120S4B1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - IGBTs - Modules category are shipped in lowest possible time.
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