Vishay Semiconductor Diodes Division VS-GT400TH120N

Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:
28.8nF @ 25V
Base Part Number:
GT400
Detailed Description:
IGBT Module Trench Half Bridge 1200V 600A 2119W Chassis Mount Double INT-A-PAK
Configuration:
Half Bridge
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
600A
Vce(on) (Max) @ Vge, Ic:
2.15V @ 15V, 400A
Supplier Device Package:
Double INT-A-PAK
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
2119W
Customer Reference:
Package / Case:
Double INT-A-PAK (3 + 8)
Input:
Standard
IGBT Type:
Trench
NTC Thermistor:
No
Current - Collector Cutoff (Max):
5mA
Manufacturer:
Vishay Semiconductor Diodes Division
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This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GT400TH120N. It holds 28.8nf @ 25v of input capacitance. Base Part Number: gt400. It features igbt module trench half bridge 1200v 600a 2119w chassis mount double int-a-pak. The product is available in half bridge configuration. The product is available in chassis mount configuration. The maximum collector current includes 600a. Features 2.15v @ 15v, 400a. double int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2119w. Moreover, the product comes in double int-a-pak (3 + 8). Its input values include standard. Features an IGBT trench type. NTC Thermistor - no. In addition, 5ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

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EOL 04/Apr/2016(PCN Obsolescence/ EOL)
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VS-GT400TH120N(Datasheets)
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PowerModules_2DBarcode Mar/2015(PCN Packaging)

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