Vishay Semiconductor Diodes Division VS-GT100TP120N

Enrgtech Part No: ET14879022
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Manufacturer Part No:
VS-GT100TP120N
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Manufacturer: Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:

12.8nF @ 30V

Base Part Number:

GT100

Detailed Description:

IGBT Module Trench Half Bridge 1200V 180A 652W Chassis Mount INT-A-PAK

Configuration:

Half Bridge

Mounting Type:

Chassis Mount

Current - Collector (Ic) (Max):

180A

Vce(on) (Max) @ Vge, Ic:

2.35V @ 15V, 100A

Supplier Device Package:

INT-A-PAK

Voltage - Collector Emitter Breakdown (Max):

1200V

Packaging:

Bulk

Operating Temperature:

175°C (TJ)

Power - Max:

652W

Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GT100TP120N. It holds 12.8nf @ 30v of input capacitance. Base Part Number: gt100. It features igbt module trench half bridge 1200v 180a 652w chassis mount int-a-pak. The product is available in half bridge configuration. The product is available in chassis mount configuration. The maximum collector current includes 180a. Features 2.35v @ 15v, 100a. int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has 175°c (tj) operating temperature range. The maximum power of the product is 652w. Moreover, the product comes in int-a-pak (3 + 4). Its input values include standard. Features an IGBT trench type. NTC Thermistor - no. In addition, 5ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

EOL 04/Apr/2016(PCN Obsolescence/ EOL)

VS-GT100TP120N(Datasheets)

PowerModules_2DBarcode Mar/2015(PCN Packaging)

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Vishay Semiconductor Diodes Division VS-GT100TP120N

VS-GT100TP120N

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