Vishay Semiconductor Diodes Division VS-GB75LP120N

Enrgtech Part No: ET14879016
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Manufacturer Part No:
VS-GB75LP120N
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Manufacturer: Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:

5.52nF @ 25V

Base Part Number:

GB75

Detailed Description:

IGBT Module Single 1200V 170A 658W Chassis Mount INT-A-PAK

Mounting Type:

Chassis Mount

Current - Collector (Ic) (Max):

170A

Vce(on) (Max) @ Vge, Ic:

1.82V @ 15V, 75A (Typ)

Supplier Device Package:

INT-A-PAK

Voltage - Collector Emitter Breakdown (Max):

1200V

Packaging:

Bulk

Operating Temperature:

-40°C ~ 150°C (TJ)

Power - Max:

658W

Customer Reference:

Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GB75LP120N. It holds 5.52nf @ 25v of input capacitance. Base Part Number: gb75. It features igbt module single 1200v 170a 658w chassis mount int-a-pak. The product is available in chassis mount configuration. The maximum collector current includes 170a. Features 1.82v @ 15v, 75a (typ). int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 658w. Moreover, the product comes in int-a-pak (3 + 4). Its input values include standard. The product is available in single configuration. NTC Thermistor - no. In addition, 1ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

EOL 04/Apr/2016(PCN Obsolescence/ EOL)

VS-GB75LP120N(Datasheets)

Plating Material Chg 03/Feb/2016(PCN Design/Specification)

PowerModules_2DBarcode Mar/2015(PCN Packaging)

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Vishay Semiconductor Diodes Division VS-GB75LP120N

VS-GB75LP120N

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