Vishay Semiconductor Diodes Division VS-EMG050J60N

Enrgtech Part No: ET14878980
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Manufacturer Part No:
VS-EMG050J60N
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Manufacturer: Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:

9.5nF @ 30V

Base Part Number:

EMG050

Detailed Description:

IGBT Module Half Bridge 600V 88A 338W Chassis Mount EMIPAK2

Mounting Type:

Chassis Mount

Current - Collector (Ic) (Max):

88A

Vce(on) (Max) @ Vge, Ic:

2.1V @ 15V, 50A

Supplier Device Package:

EMIPAK2

Voltage - Collector Emitter Breakdown (Max):

600V

Packaging:

Bulk

Operating Temperature:

150°C (TJ)

Power - Max:

338W

Customer Reference:

Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-EMG050J60N. It holds 9.5nf @ 30v of input capacitance. Base Part Number: emg050. It features igbt module half bridge 600v 88a 338w chassis mount emipak2. The product is available in chassis mount configuration. The maximum collector current includes 88a. Features 2.1v @ 15v, 50a. emipak2 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 338w. Moreover, the product comes in emipak2. Its input values include standard. The product is available in half bridge configuration. NTC Thermistor - yes. In addition, 100µa is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

EOL 04/Apr/2016(PCN Obsolescence/ EOL)

VS-EMG050J60N(Datasheets)

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Vishay Semiconductor Diodes Division VS-EMG050J60N

VS-EMG050J60N

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