ON Semiconductor FP7G75US60

FP7G75US60 ON Semiconductor
ON Semiconductor

Product Information

Input Capacitance (Cies) @ Vce:
4.515nF @ 30V
Base Part Number:
FP7G75
Detailed Description:
IGBT Module Half Bridge 600V 75A 310W Chassis Mount EPM7
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
75A
Series:
Power-SPM™
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 75A
Supplier Device Package:
EPM7
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Operating Temperature:
-40°C ~ 125°C (TJ)
Power - Max:
310W
Customer Reference:
Package / Case:
EPM7
Input:
Standard
Configuration:
Half Bridge
NTC Thermistor:
No
Current - Collector Cutoff (Max):
250µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FP7G75US60. It holds 4.515nf @ 30v of input capacitance. Base Part Number: fp7g75. It features igbt module half bridge 600v 75a 310w chassis mount epm7. The product is available in chassis mount configuration. The maximum collector current includes 75a. The product power-spm™, is a highly preferred choice for users. Features 2.8v @ 15v, 75a. epm7 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. The product has -40°c ~ 125°c (tj) operating temperature range. The maximum power of the product is 310w. Moreover, the product comes in epm7. Its input values include standard. The product is available in half bridge configuration. NTC Thermistor - no. In addition, 250µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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FP7G75US60(Datasheets)

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