Microsemi Corporation APTGT50A120T1G

APTGT50A120T1G Microsemi Corporation
Microsemi Corporation

Product Information

Input Capacitance (Cies) @ Vce:
3.6nF @ 25V
Current - Collector (Ic) (Max):
75A
Detailed Description:
IGBT Module Trench Field Stop Half Bridge 1200V 75A 277W Chassis Mount SP1
Configuration:
Half Bridge
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
250µA
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
Supplier Device Package:
SP1
Manufacturer Standard Lead Time:
36 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
277W
Package / Case:
SP1
Input:
Standard
IGBT Type:
Trench Field Stop
NTC Thermistor:
Yes
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTGT50A120T1G. It holds 3.6nf @ 25v of input capacitance. The maximum collector current includes 75a. It features igbt module trench field stop half bridge 1200v 75a 277w chassis mount sp1. The product is available in half bridge configuration. The product is available in chassis mount configuration. In addition, 250µa is the maximum current at collector cutoff. Features 2.1v @ 15v, 50a. sp1 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 277w. Moreover, the product comes in sp1. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - yes. The microsemi corporation's product offers user-desired applications.

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