Vishay Semiconductor Diodes Division VS-ENQ030L120S

VS-ENQ030L120S Vishay Semiconductor Diodes Division
Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:
3.34nF @ 30V
Base Part Number:
ENQ030
Detailed Description:
IGBT Module Trench Three Level Inverter 1200V 61A 216W Chassis Mount EMIPAK-1B
Configuration:
Three Level Inverter
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
61A
Vce(on) (Max) @ Vge, Ic:
2.52V @ 15V, 30A
Supplier Device Package:
EMIPAK-1B
Manufacturer Standard Lead Time:
45 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
216W
Customer Reference:
Package / Case:
EMIPAK-1B
Input:
Standard
IGBT Type:
Trench
NTC Thermistor:
Yes
Current - Collector Cutoff (Max):
230µA
Manufacturer:
Vishay Semiconductor Diodes Division
Checking for live stock

This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-ENQ030L120S. It holds 3.34nf @ 30v of input capacitance. Base Part Number: enq030. It features igbt module trench three level inverter 1200v 61a 216w chassis mount emipak-1b. The product is available in three level inverter configuration. The product is available in chassis mount configuration. The maximum collector current includes 61a. Features 2.52v @ 15v, 30a. emipak-1b is the supplier device package value. It has typical 45 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 216w. Moreover, the product comes in emipak-1b. Its input values include standard. Features an IGBT trench type. NTC Thermistor - yes. In addition, 230µa is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

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VS-ENQ030L120S(Datasheets)

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