Microsemi Corporation APT100GT120JRDQ4

APT100GT120JRDQ4 Microsemi Corporation
APT100GT120JRDQ4
Microsemi Corporation

Product Information

Input Capacitance (Cies) @ Vce:
7.85nF @ 25V
Current - Collector (Ic) (Max):
123A
Detailed Description:
IGBT Module NPT Single 1200V 123A 570W Chassis Mount ISOTOP®
Configuration:
Single
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
200µA
Series:
Thunderbolt IGBT®
Vce(on) (Max) @ Vge, Ic:
3.7V @ 15V, 100A
Supplier Device Package:
ISOTOP®
Manufacturer Standard Lead Time:
16 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
570W
Package / Case:
ISOTOP
Input:
Standard
IGBT Type:
NPT
NTC Thermistor:
No
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT100GT120JRDQ4. It holds 7.85nf @ 25v of input capacitance. The maximum collector current includes 123a. It features igbt module npt single 1200v 123a 570w chassis mount isotop®. The product is available in single configuration. The product is available in chassis mount configuration. In addition, 200µa is the maximum current at collector cutoff. The product thunderbolt igbt®, is a highly preferred choice for users. Features 3.7v @ 15v, 100a. isotop® is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 570w. Moreover, the product comes in isotop. Its input values include standard. Features an IGBT npt type. NTC Thermistor - no. The microsemi corporation's product offers user-desired applications.

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