Vishay Semiconductor Diodes Division VS-GB400TH120N

Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:
32.7nF @ 25V
Base Part Number:
GB400
Detailed Description:
IGBT Module Half Bridge 1200V 800A 2604W Chassis Mount Double INT-A-PAK
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
800A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 400A (Typ)
Supplier Device Package:
Double INT-A-PAK
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
2604W
Customer Reference:
Package / Case:
Double INT-A-PAK (3 + 4)
Input:
Standard
Configuration:
Half Bridge
NTC Thermistor:
No
Current - Collector Cutoff (Max):
5mA
Manufacturer:
Vishay Semiconductor Diodes Division
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This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GB400TH120N. It holds 32.7nf @ 25v of input capacitance. Base Part Number: gb400. It features igbt module half bridge 1200v 800a 2604w chassis mount double int-a-pak. The product is available in chassis mount configuration. The maximum collector current includes 800a. Features 1.9v @ 15v, 400a (typ). double int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2604w. Moreover, the product comes in double int-a-pak (3 + 4). Its input values include standard. The product is available in half bridge configuration. NTC Thermistor - no. In addition, 5ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

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VS-GBYYY 12/Mar/2019(PCN Obsolescence/ EOL)
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Plating Material Chg 03/Feb/2016(PCN Design/Specification)
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PowerModules_2DBarcode Mar/2015(PCN Packaging)

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Yes. We ship VS-GB400TH120N Internationally to many countries around the world.