Deliver to
United Kingdom
This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GT50TP60N. It holds 3.03nf @ 30v of input capacitance. Base Part Number: gt50. It features igbt module trench half bridge 600v 85a 208w chassis mount int-a-pak. The product is available in half bridge configuration. The product is available in chassis mount configuration. The maximum collector current includes 85a. Features 2.1v @ 15v, 50a. int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, bulk is the available packaging type of the product. The product has 175°c (tj) operating temperature range. The maximum power of the product is 208w. Moreover, the product comes in int-a-pak (3 + 4). Its input values include standard. Features an IGBT trench type. NTC Thermistor - no. In addition, 1ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.
For more information please check the datasheets.
Basket Total:
£ 0