Vishay Semiconductor Diodes Division VS-GB200TH120U

Vishay Semiconductor Diodes Division

Product Information

Input Capacitance (Cies) @ Vce:
16.9nF @ 30V
Base Part Number:
GB200
Detailed Description:
IGBT Module Half Bridge 1200V 330A 1316W Chassis Mount Double INT-A-PAK
Mounting Type:
Chassis Mount
Current - Collector (Ic) (Max):
330A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 200A
Supplier Device Package:
Double INT-A-PAK
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
1316W
Customer Reference:
Package / Case:
Double INT-A-PAK (3 + 4)
Input:
Standard
Configuration:
Half Bridge
NTC Thermistor:
No
Current - Collector Cutoff (Max):
5mA
Manufacturer:
Vishay Semiconductor Diodes Division
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This is manufactured by Vishay Semiconductor Diodes Division. The manufacturer part number is VS-GB200TH120U. It holds 16.9nf @ 30v of input capacitance. Base Part Number: gb200. It features igbt module half bridge 1200v 330a 1316w chassis mount double int-a-pak. The product is available in chassis mount configuration. The maximum collector current includes 330a. Features 3.6v @ 15v, 200a. double int-a-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1316w. Moreover, the product comes in double int-a-pak (3 + 4). Its input values include standard. The product is available in half bridge configuration. NTC Thermistor - no. In addition, 5ma is the maximum current at collector cutoff. The vishay semiconductor diodes division's product offers user-desired applications.

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Mult Dev EOL 10/Jan/2020(PCN Obsolescence/ EOL)
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VS-GB200TH120U(Datasheets)
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Plating Material Chg 03/Feb/2016(PCN Design/Specification)
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PowerModules_2DBarcode Mar/2015(PCN Packaging)

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Yes. We ship VS-GB200TH120U Internationally to many countries around the world.