Rohm Semiconductor RD3G03BBGTL1

RD3G03BBGTL1 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
18.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1170 pF @ 20 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RD3G03BBGTL1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 18.2 nc @ 10 v. It has a maximum Rds On and voltage of 6.5mohm @ 35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 50w (tc). The product's input capacitance at maximum includes 1170 pf @ 20 v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. to-252 is the supplier device package value. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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