Infineon Technologies IPI90N04S402TATMA1

Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 95µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
118 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 90A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9430 pF @ 25 V
Mounting Type:
Through Hole
Series:
OptiMOS®-T2
Supplier Device Package:
PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPI90N04S402TATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 95µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 118 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.5mohm @ 90a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 9430 pf @ 25 v. The product is available in through hole configuration. The product optimos®-t2, is a highly preferred choice for users. pg-to262-3-1 is the supplier device package value. The continuous current drain at 25°C is 90a (tc). The product carries maximum power dissipation 150w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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