UTD Semiconductor SI2301A

UTD Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
85mOhm @ 2.8A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
405 pF @ 10 V
Mounting Type:
Surface Mount
Series:
UMW
Supplier Device Package:
SOT-23
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by UTD Semiconductor. The manufacturer part number is SI2301A. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 10 nc @ 4.5 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 85mohm @ 2.8a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400mw (ta). The product's input capacitance at maximum includes 405 pf @ 10 v. The product is available in surface mount configuration. The product umw, is a highly preferred choice for users. sot-23 is the supplier device package value. The continuous current drain at 25°C is 2.8a (ta). This product use mosfet (metal oxide) technology.

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UMW SI2301A(Datasheets)

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FAQs

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