UTD Semiconductor 100N03A

UTD Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
105W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1963 pF @ 15 V
Mounting Type:
Surface Mount
Series:
UMW
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by UTD Semiconductor. The manufacturer part number is 100N03A. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 41 nc @ 10 v. It has a maximum Rds On and voltage of 4.9mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 105w (tc). The product's input capacitance at maximum includes 1963 pf @ 15 v. The product is available in surface mount configuration. The product umw, is a highly preferred choice for users. to-252 (dpak) is the supplier device package value. The continuous current drain at 25°C is 90a (tc). This product use mosfet (metal oxide) technology.

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UMW 100N03A(Datasheets)

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FAQs

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Yes. We ship 100N03A Internationally to many countries around the world.