Toshiba Semiconductor and Storage TK18A30D,S5X

Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
139mOhm @ 9A, 10V
title:
TK18A30D,S5X
Vgs(th) (Max) @ Id:
3.5V @ 1mA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
standardLeadTime:
74 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 100 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK18A30D,S5X. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 139mohm @ 9a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 300 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 45w (tc). It has a long 74 weeks standard lead time. The product's input capacitance at maximum includes 2600 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 60 nc @ 10 v. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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