Toshiba Semiconductor and Storage TK14V65W,LQ

Enrgtech Part No: ET23515232
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Manufacturer Part No:
TK14V65W,LQ
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Manufacturer: Toshiba Semiconductor and Storage

TK14V65W-LQ Toshiba Semiconductor and Storage TK14V65W,LQ

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

150°C

Package / Case:

4-VSFN Exposed Pad

Rds On (Max) @ Id, Vgs:

280mOhm @ 6.9A, 10V

title:

TK14V65W,LQ

Vgs(th) (Max) @ Id:

3.5V @ 690µA

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

10V

Drain to Source Voltage (Vdss):

650 V

Vgs (Max):

±30V

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK14V65W,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in 4-vsfn exposed pad. It has a maximum Rds On and voltage of 280mohm @ 6.9a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 690µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 139w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 1300 pf @ 300 v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 35 nc @ 10 v. 4-dfn-ep (8x8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 13.7a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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