onsemi FQPF7N65CYDTU-T

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Formed Leads
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 3.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1245 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3 (Y-Forming)
Current - Continuous Drain (Id) @ 25°C:
7A (Tj)
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FQPF7N65CYDTU-T. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, formed leads. The maximum gate charge and given voltages include 36 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 1.4ohm @ 3.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1245 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220f-3 (y-forming) is the supplier device package value. The continuous current drain at 25°C is 7a (tj). The product carries maximum power dissipation 52w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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