Goford Semiconductor GT100N12D5

GT100N12D5 Goford Semiconductor
Goford Semiconductor

Product Information

HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
120W
Input Capacitance (Ciss) (Max) @ Vds:
3050 pF @ 60 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
70A
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is GT100N12D5. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 10mohm @ 35a, 10v. The maximum gate charge and given voltages include 50 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 120w. The product's input capacitance at maximum includes 3050 pf @ 60 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. 8-dfn (5x6) is the supplier device package value. The continuous current drain at 25°C is 70a. This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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