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This is manufactured by Goford Semiconductor. The manufacturer part number is G2012. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 12mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 29 nc @ 10 v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±10v. The product carries maximum power dissipation 1.5w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 1255 pf @ 10 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-dfn (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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