Vishay Siliconix SIR1309DP-T1-GE3

SIR1309DP-T1-GE3 Vishay Siliconix
SIR1309DP-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
7.3mOhm @ 10A, 10V
edacadModel:
SIR1309DP-T1-GE3 Models
Gate Charge (Qg) (Max) @ Vgs:
87 nC @ 10 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/16181858
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4.8W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3250 pF @ 15 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
19.1A (Ta), 65.7A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIR1309DP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 7.3mohm @ 10a, 10v. The maximum gate charge and given voltages include 87 nc @ 10 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 4.8w (ta), 56.8w (tc). The product's input capacitance at maximum includes 3250 pf @ 15 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 19.1a (ta), 65.7a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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New solder paste 26/May/2023(PCN Assembly/Origin)
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SIR1309DP(Datasheets)
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Mult Dev 07/Jun/2023(PCN Design/Specification)

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FAQs

Yes. You can also search SIR1309DP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET23200297. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIR1309DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIR1309DP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIR1309DP-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23200297 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23200297.
Yes. We ship SIR1309DP-T1-GE3 Internationally to many countries around the world.