Vishay Siliconix SIR582DP-T1-RE3

SIR582DP-T1-RE3 Vishay Siliconix
SIR582DP-T1-RE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5.6W (Ta), 92.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3360 pF @ 40 V
standardLeadTime:
62 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen V
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
28.9A (Ta), 116A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIR582DP-T1-RE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 3.4mohm @ 15a, 10v. The maximum gate charge and given voltages include 67 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5.6w (ta), 92.5w (tc). The product's input capacitance at maximum includes 3360 pf @ 40 v. It has a long 62 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen v, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 28.9a (ta), 116a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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New solder paste 26/May/2023(PCN Assembly/Origin)
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N-Channel 80 V (D-S) MOSFET(Datasheets)
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Mult Dev 07/Jun/2023(PCN Design/Specification)

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FAQs

Yes. You can also search SIR582DP-T1-RE3 on website for other similar products.
We accept all major payment methods for all products including ET23008381. Please check your shopping cart at the time of order.
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIR582DP-T1-RE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIR582DP-T1-RE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23008381 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23008381.
Yes. We ship SIR582DP-T1-RE3 Internationally to many countries around the world.