Infineon Technologies IMW120R020M1HXKSA1

IMW120R020M1HXKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
26.9mOhm @ 41A, 18V
Gate Charge (Qg) (Max) @ Vgs:
109 nC @ 18 V
Vgs(th) (Max) @ Id:
5.2V @ 17.6mA
REACH Status:
REACH Unaffected
edacadModel:
IMW120R020M1HXKSA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/16254472
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+20V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
375W (Tc)
Qualification:
-
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3460 pF @ 800 V
Mounting Type:
Through Hole
Grade:
-
Series:
CoolSiC™
Supplier Device Package:
PG-TO247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
98A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IMW120R020M1HXKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 26.9mohm @ 41a, 18v. The maximum gate charge and given voltages include 109 nc @ 18 v. The typical Vgs (th) (max) of the product is 5.2v @ 17.6ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +20v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 375w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 3460 pf @ 800 v. The product is available in through hole configuration. The product coolsic™, is a highly preferred choice for users. pg-to247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 98a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IMW120R020M1HXKSA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IMW120R020M1HXKSA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22976709 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22976709.
Yes. We ship IMW120R020M1HXKSA1 Internationally to many countries around the world.