PN Junction Semiconductor P3M171K0T3

P3M171K0T3 PN Junction Semiconductor
PN Junction Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 2mA (Typ)
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-2
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 2A, 15V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain to Source Voltage (Vdss):
1700 V
Vgs (Max):
+19V, -8V
Power Dissipation (Max):
100W
Mounting Type:
Through Hole
Series:
P3M
Supplier Device Package:
TO-220-2L
Current - Continuous Drain (Id) @ 25°C:
6A
Technology:
SiCFET (Silicon Carbide)
Checking for live stock

This is manufactured by PN Junction Semiconductor. The manufacturer part number is P3M171K0T3. The typical Vgs (th) (max) of the product is 2.2v @ 2ma (typ). The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-2. It has a maximum Rds On and voltage of 1.4ohm @ 2a, 15v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v. It is shipped in tube package . The product has a 1700 v drain to source voltage. The maximum Vgs rate is +19v, -8v. The product carries maximum power dissipation 100w. The product is available in through hole configuration. The product p3m, is a highly preferred choice for users. to-220-2l is the supplier device package value. The continuous current drain at 25°C is 6a. This product use sicfet (silicon carbide) technology.

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P3M171K0T3(Datasheets)

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