PN Junction Semiconductor P3M12160K3

P3M12160K3 PN Junction Semiconductor
PN Junction Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 2.5mA (Typ)
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
192mOhm @ 10A, 15V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+21V, -8V
Power Dissipation (Max):
110W
Mounting Type:
Through Hole
Series:
P3M
Supplier Device Package:
TO-247-3L
Current - Continuous Drain (Id) @ 25°C:
19A
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by PN Junction Semiconductor. The manufacturer part number is P3M12160K3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.4v @ 2.5ma (typ). The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 192mohm @ 10a, 15v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +21v, -8v. The product carries maximum power dissipation 110w. The product is available in through hole configuration. The product p3m, is a highly preferred choice for users. to-247-3l is the supplier device package value. The continuous current drain at 25°C is 19a. This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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P3M12160K3(Datasheets)

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