PN Junction Semiconductor P3M12080K3

P3M12080K3 PN Junction Semiconductor
PN Junction Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 5mA (Typ)
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
96mOhm @ 20A, 15V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+21V, -8V
Power Dissipation (Max):
221W
Mounting Type:
Through Hole
Series:
P3M
Supplier Device Package:
TO-247-3L
Current - Continuous Drain (Id) @ 25°C:
47A
Technology:
SiCFET (Silicon Carbide)
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This is manufactured by PN Junction Semiconductor. The manufacturer part number is P3M12080K3. The typical Vgs (th) (max) of the product is 2.4v @ 5ma (typ). The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 96mohm @ 20a, 15v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +21v, -8v. The product carries maximum power dissipation 221w. The product is available in through hole configuration. The product p3m, is a highly preferred choice for users. to-247-3l is the supplier device package value. The continuous current drain at 25°C is 47a. This product use sicfet (silicon carbide) technology.

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P3M12080K3(Datasheets)

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