PN Junction Semiconductor P1H06300D8

P1H06300D8 PN Junction Semiconductor
PN Junction Semiconductor

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs:
1.3V @ 1mA
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+10V, -20V
Power Dissipation (Max):
55.5W
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN8*8
Current - Continuous Drain (Id) @ 25°C:
10A
Technology:
GaNFET (Gallium Nitride)
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This is manufactured by PN Junction Semiconductor. The manufacturer part number is P1H06300D8. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. It has a maximum Rds On and voltage of 1.3v @ 1ma. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +10v, -20v. The product carries maximum power dissipation 55.5w. The product is available in surface mount configuration. dfn8*8 is the supplier device package value. The continuous current drain at 25°C is 10a. This product use ganfet (gallium nitride) technology.

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P1H06300D8(Datasheets)

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