Renesas RJK5030DPD-03#J2

Renesas

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
MP-3A
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Power Dissipation (Max):
41.7W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is RJK5030DPD-03#J2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product is rohs non-compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 1.6ohm @ 2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 550 pf @ 25 v. The product is available in surface mount configuration. mp-3a is the supplier device package value. The continuous current drain at 25°C is 5a (ta). The product carries maximum power dissipation 41.7w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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