NXP Semiconductors PSMN6R3-120PS

PSMN6R3-120PS NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.29.0075
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
207.1 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Power Dissipation (Max):
405W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
11384 pF @ 60 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN6R3-120PS. It is assigned with possible HTSUS value of 8541.29.0075. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 207.1 nc @ 10 v. The product is rohs non-compliant. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 6.7mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 405w (ta). The product's input capacitance at maximum includes 11384 pf @ 60 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 70a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PSMN6R3-120PS(Datasheets)

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