onsemi NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
3.7W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 130A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTMFS5C442NLTWFT1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 2.5mohm @ 50a, 10v. The maximum gate charge and given voltages include 50 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3.7w (ta), 83w (tc). The product's input capacitance at maximum includes 3100 pf @ 25 v. The product is available in surface mount configuration. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 28a (ta), 130a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Wafer Fab Change 17/Oct/2022(PCN Assembly/Origin)
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NTMFS5C442NLT(Datasheets)

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