Fairchild Semiconductor FCPF165N65S3R0L

FCPF165N65S3R0L Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 410µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
165mOhm @ 9.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Power Dissipation (Max):
35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1415 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCPF165N65S3R0L. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 410µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs non-compliant. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 165mohm @ 9.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 35w (tc). The product's input capacitance at maximum includes 1415 pf @ 400 v. The product is available in through hole configuration. The product superfet® iii, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The continuous current drain at 25°C is 19a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FCPF165N65S3R0L(Datasheets)

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