Renesas 2SK2157C-T1-AZ

Renesas

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-243AA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 4 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
63mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
MP-2
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is 2SK2157C-T1-AZ. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-243aa. The maximum gate charge and given voltages include 4 nc @ 4 v. The product is rohs non-compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 63mohm @ 2a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 260 pf @ 10 v. The product is available in surface mount configuration. mp-2 is the supplier device package value. The continuous current drain at 25°C is 3.5a (ta). The product carries maximum power dissipation 2w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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