onsemi NTC020N120SC1

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
28mOhm @ 60A, 20V
title:
NTC020N120SC1
Vgs(th) (Max) @ Id:
4.3V @ 20mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
2890 pF @ 800 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
203 nC @ 20 V
Supplier Device Package:
Die
Packaging:
Tray
Current - Continuous Drain (Id) @ 25°C:
103A (Tc)
Power Dissipation (Max):
535W (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NTC020N120SC1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in die. It has a maximum Rds On and voltage of 28mohm @ 60a, 20v. The typical Vgs (th) (max) of the product is 4.3v @ 20ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is not applicable. The product's input capacitance at maximum includes 2890 pf @ 800 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 203 nc @ 20 v. die is the supplier device package value. In addition, tray is the available packaging type of the product. The continuous current drain at 25°C is 103a (tc). The product carries maximum power dissipation 535w (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 30/Jun/2022(PCN Obsolescence/ EOL)

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