onsemi FQB27N25TM-F085P

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Rds On (Max) @ Id, Vgs:
131mOhm @ 25.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK-3 (TO-263-3)
Current - Continuous Drain (Id) @ 25°C:
25.5A (Tc)
Power Dissipation (Max):
417W (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB27
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FQB27N25TM-F085P. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 49 nc @ 10 v. It has a maximum Rds On and voltage of 131mohm @ 25.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1800 pf @ 25 v. The product is available in surface mount configuration. d²pak-3 (to-263-3) is the supplier device package value. The continuous current drain at 25°C is 25.5a (tc). The product carries maximum power dissipation 417w (tj). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqb27, a base product number of the product. The product is designated with the ear99 code number.

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EOL NOTICE 30/Mar/2023(PCN Obsolescence/ EOL)

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