onsemi FDC658AP-G

onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
8.1 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH info available upon request
Rds On (Max) @ Id, Vgs:
50mOhm @ 4A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
800mW (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FDC658AP-G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The maximum gate charge and given voltages include 8.1 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach info available upon request. It has a maximum Rds On and voltage of 50mohm @ 4a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 680 pf @ 15 v. The product is available in surface mount configuration. supersot™-6 is the supplier device package value. The continuous current drain at 25°C is 4a (ta). The product carries maximum power dissipation 800mw (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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