Fairchild Semiconductor RFP40N10LE

RFP40N10LE Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
40Ohm @ 40A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is RFP40N10LE. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 180 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 40ohm @ 40a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 3000 pf @ 25 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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