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This is manufactured by Harris Corporation. The manufacturer part number is RF1S640SM. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 64 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach affected. It has a maximum Rds On and voltage of 180mohm @ 10a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 1275 pf @ 25 v. The product is available in surface mount configuration. to-263ab is the supplier device package value. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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