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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN4R3-100ES,127. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 170 nc @ 10 v. The product is not applicable. In addition, it is reach affected. It has a maximum Rds On and voltage of 4.3mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9900 pf @ 50 v. The product is available in through hole configuration. i2pak is the supplier device package value. The continuous current drain at 25°C is 120a (tc). The product carries maximum power dissipation 338w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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