NXP USA Inc. PSMN1R4-40YLD,115

PSMN1R4-40YLD-115 NXP USA Inc. PSMN1R4-40YLD,115
NXP USA Inc.

Product Information

RoHS Status:
Not applicable
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 10V
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
*
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
238W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN1R4-40YLD,115. The product is not applicable. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 1.4mohm @ 25a, 10v. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). The product carries maximum power dissipation 238w (tc). This product use mosfet (metal oxide) technology.

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FAQs

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