NXP USA Inc. PMN48XPA115

PMN48XPA115 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-74, SOT-457
Rds On (Max) @ Id, Vgs:
55mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 4.5 V
RoHS Status:
Not applicable
REACH Status:
Vendor Undefined
FET Type:
P-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
530mW (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Current - Continuous Drain (Id) @ 25°C:
4.1A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMN48XPA115. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.25v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-74, sot-457. It has a maximum Rds On and voltage of 55mohm @ 2.4a, 4.5v. The maximum gate charge and given voltages include 13 nc @ 4.5 v. The product is not applicable. In addition, it is vendor undefined. It carries FET type p-channel. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 530mw (ta), 6.25w (tc). The product's input capacitance at maximum includes 1000 pf @ 10 v. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The continuous current drain at 25°C is 4.1a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PMN48XPA,115(Datasheets)

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