NXP USA Inc. PH9030AL115

PH9030AL115 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0075
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
17.8 nC @ 10 V
RoHS Status:
Not applicable
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
8mOhm @ 15A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1006 pF @ 12 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
61A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PH9030AL115. It is assigned with possible HTSUS value of 8541.21.0075. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 17.8 nc @ 10 v. The product is not applicable. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 8mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1006 pf @ 12 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 61a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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