Fairchild Semiconductor NDB7052L

NDB7052L Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 37.5A, 10V
title:
NDB7052L
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4030 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 5 V
Supplier Device Package:
TO-220-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is NDB7052L. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -65°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 7.5mohm @ 37.5a, 10v. The product is rohs non-compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The product has a 50 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 4030 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 130 nc @ 5 v. to-220-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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