Harris Corporation IRFR220

Harris Corporation

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
800mOhm @ 2.4A, 10V
title:
IRFR220
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Supplier Device Package:
TO-252AA
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4.6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Harris Corporation. The manufacturer part number is IRFR220. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 800mohm @ 2.4a, 10v. The product is rohs non-compliant. In addition, it is vendor undefined. It carries FET type n-channel. The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 50w (tc). The product's input capacitance at maximum includes 330 pf @ 25 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 18 nc @ 10 v. to-252aa is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 4.6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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